| Title | 트랜지스터 - 양극(BJT) - 어레이, 프리 바이어스드 2 PNP - 사전 바이어싱됨(이중) 50V 100mA 250MHz 100mW 표면 실장 ES6 |
| Description | RN1961 to RN1966 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN1961, RN1962, RN1963 RN1964, RN1965, RN1966 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm Including two devices in US6 (ultra super mini type 6 leads) With built-in bias resistors. Simplify circuit design Reduce a quantity of parts and manufac... |
| Features |
ctor power dissipation Junction temperature Storage temperature range
RN1961 to 1966 RN1961 to 1964 RN1965, 1966
RN1961 to 1966
VCBO VCEO
VEBO
IC PC* Tj Tstg
50
V
50
V
10 V
5
100
mA
200
mW
150
°C
−55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant chan...
|
| Datasheet |
 RN1965 Datasheet - 727.88KB |
| Distributor |
DigiKey |
| Stock | 20 In stock |
| Price |
10 units: 167.3 KRW 1 units: 202 KRW
|
| BuyNow |
 BuyNow - Manufacturer a Toshiba America Electronic Components RN1965FE(TE85L,F)
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
10 units: 167.3 KRW 1 units: 202 KRW |
BuyNow |
|
 Mouser Electronics |
1 units: 0.4 USD 10 units: 0.344 USD 100 units: 0.213 USD 1000 units: 0.108 USD 3000 units: 0.069 USD 9000 units: 0.057 USD 24000 units: 0.055 USD 45000 units: 0.047 USD 99000 units: 0.046 USD |
