RN2109MFV Datasheet | Toshiba

RN2107MFV to RN2109MFV Bipolar Transistors Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN2107MFV/08MFV/09MFV 1. Applications - Switching - Inverter Circuits - Interfacing - Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to acmodate various circuit designs. (5) plementary to RN1107MFV to 1109MFV 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN2107MFV RN2108MFV RN2109MFV R1 (kΩ) 10 22 47 R2 (kΩ) 47 47 22 ©2021-2024 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2005-02 2024-01-26 Rev.5.0 5. Packaging and Pin Assignment RN2107MFV to RN2109MFV 1: Base 2: Emitter 3: Collector VESM 6. Orderable part number Orderable part number AEC-Q101 Note RN2107MFV RN2107MFV,L3F...