RN2710JE
RN2710JE is Silicon PNP Epitaxial Type Transistor manufactured by Toshiba.
RN2710JE,RN2711JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor)
RN2710JE, RN2711JE
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Unit: mm
- Two devices are incorporated into an Extreme-Super-Mini (5-pin) package.
- Incorporating a bias resistor into a transistor reduces parts count.
- Reducing the parts count enables the manufacture of ever more pact equipment and lowers assembly cost.
- A wide range of resistor values are available for use in various circuit designs.
- plementary to RN1710JE, RN1711JE
Equivalent Circuit
R1 B
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO
- 50
VCEO
- 50
VEBO
- 5
- 100 m A
PC (Note 1)
100 m W
Tj
°C
Tstg
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate,...
