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S1375
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS, DRIVER STAGE AMPLIFIER APPLICATIONS.
FEATURES . Complementary to S1376
Unit in mm
&—..9.9MAX. 03.2±Oig ,
'" %. ,*
3.
n
II
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VcBO v CEO v EBO ic
IB PC T
J
T stg
RATING 80 80
5
750 500 1.5 150
-55-150
UNIT V V V
mA mA
W °C °C
I 1 2 Z
9.9 MAX.
1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK?
TOSHIBA Weight : 1.
S1375 Datasheet
