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S1376 - NPN Transistor

Key Features

  • . Complementary to S1375 Unit in mm 9.9MAX. 03.2±O.2 W- -$ a. m 0.6 6.

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Datasheet Details

Part number S1376
Manufacturer Toshiba
File Size 77.73 KB
Description NPN Transistor
Datasheet download datasheet S1376 Datasheet

Full PDF Text Transcription for S1376 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S1376. For precise diagrams, and layout, please refer to the original PDF.

S1376 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS, FEATURES . Complementary to S1375 Unit in mm 9.9M...

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LIFIER APPLICATIONS, FEATURES . Complementary to S1375 Unit in mm 9.9MAX. 03.2±O.2 W- -$ a. m 0.6 6 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO VCEO Vebo ic IB ?C TJ T stg RATING -80 -80 -5 -750 -500 1.5 150 -55-150 UNIT V V V mA mA W °C °C Tr-rp; 4* ',3- ,9, 9 MAX. 1. EMITTER 2. BASE 3- COLLECTOR (HEAT SINK) JEDEC TOSHIBA Weight : 1.