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Toshiba Electronic Components Datasheet

S1376 Datasheet

SILICON PNP TRIPLE DIFFUSED TYPE

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S1376
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
DRIVER STAGE AMPLIFIER APPLICATIONS,
FEATURES
. Complementary to S1375
Unit in mm
9.9MAX. 03.2±O.2
W- -$
a.
m
0.6 6
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
v CBO
VCEO
Vebo
ic
IB
?C
TJ
T stg
RATING
-80
-80
-5
-750
-500
1.5
150
-55-150
UNIT
V
V
V
mA
mA
W
°C
°C
Tr-rp;
4*
',3-
,9, 9 MAX.
1. EMITTER
2. BASE
3- COLLECTOR (HEAT SINK)
JEDEC
TOSHIBA
Weight : 1.4g
ELECTRICAL CHARACTERISTICS (Ta=25 C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter
Breakdown Voltage
ICB0
x EB0
V CB=-30V, I E=0
V EB =-5V, I C =0
v (BR) CEO I c =-10mA, Ib=0
DC Current Gain
hFE(l)
hFE(2)
Collector-Emitter
Saturation Voltage
v CE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Collector Output Capacitance Cob
V ce=-2V, Ic=-150mA
VCE=-2V, Ic=-500mA
I c=_500mA, I B =-50mA
VCE =-2V, Ic=-500mA
V CE=-2V, I c=-150mA
VCB=-10V, Ie=0, f=lMHz
MIN.
-
-
TYP. MAX. UNIT
- -0.5 mA
- -1.0 mA
80 - - V
70 - 240
40 -
-
-
- -0.5
V
-
- -1.0
V
50 100
- MHz
- 20 - pF
TOSHIBA CORPORATION HlHH||HHHHHIIHI«HHlHl»tHIHH«HIH«HllWUHHHIHHH»HHHHHIHHHI»IUHIHIHHIHH«lHIHHIIHHHH»UHWHIHHIHlHHHHlHHHIIHHHII»HHHIH«UHHHIIHHHHIIHIIIHII
-1084-


Toshiba Electronic Components Datasheet

S1376 Datasheet

SILICON PNP TRIPLE DIFFUSED TYPE

No Preview Available !

S1376
e -600
VCE
-14 -32
-16/ '/
w
k y.
t
9u* /
-10
COMMON
EMITTER
TO- 25°C
-8
-6
-4
I B = -2mA
-1 -2 -3 -4 -5 -6
COLLECTOR-EMITTER VOLTAGE V CE (V;
1000,
500
300
h FE
COMMON EMITTER
VCE = -2V
= 75°C
11
25
===== -25
*<:-
-10 -30 -50 -100 -300-500 -1000
COLLECTOR CURRENT I c (mA)
V CE(sat
COMMON EMITTER
I C /I B = 10
-0.5
-0.3
a
w
o
>
« -0.05
o
H
O
w
w
rh
<1
-0.03
Hl-l
o ot-1 Hi
u>
-3 -5
-10
1^" &\
x
\
25
-25
L
-30 -50 -100
-300-500 -1000
COLLECTOR CURRENT I c (mA)
I C - V BE
- V CE
-600
2V
/
T
1
H -200
p llO
to JO?
1
1
A
-100
1'
i
;/
-C.2 -0.4 -0.6 -0.8
-1.0 -1.2
-1.4
BASE -EMITTER VOLTAGE VBE (V)
-1085-
TOSHIBA CORPORATION


Part Number S1376
Description SILICON PNP TRIPLE DIFFUSED TYPE
Maker Toshiba
Total Page 2 Pages
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