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S1377 - NPN Transistor

Key Features

  • . High Collector to Emitter Breakdown Voltage V CEO=250V Unit in mm 9.9MAX. 03.2+0.2 i? n. 1.2 TTTI 0.66.

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Datasheet Details

Part number S1377
Manufacturer Toshiba
File Size 89.50 KB
Description NPN Transistor
Datasheet download datasheet S1377 Datasheet

Full PDF Text Transcription for S1377 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S1377. For precise diagrams, and layout, please refer to the original PDF.

S1377 SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) MEDIUM POWER AMPLIFIER APPLICATIONS. TV HORIZONTAL DRIVER APPLICATIONS. FEATURES . High Collector to Emitter Breakdow...

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TAL DRIVER APPLICATIONS. FEATURES . High Collector to Emitter Breakdown Voltage V CEO=250V Unit in mm 9.9MAX. 03.2+0.2 i? n. 1.2 TTTI 0.66 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C Junction Temperature Storage Temperature Range SYMBOL V CBO v CEO v EBO ic IB PC T i T stg RATING 250 250 6 500 250 1.5 6.25 150 -55-150 2.54 C1.6 UNIT V V V mA mA W °c °c Tt;r : ; 9. 9 MAX. 1. EMITTER 2. BASE 3. COLLECTOR (HEAT SINK) JEDEC EIA J TOSHIBA 2-10Dli Weight : 1.