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S1805 Toshiba (https://www.toshiba.com/) Silicon NPN Transistor

Toshiba
Description : ) SILICON NPN EPITAXIAL TYPE (PCT PROCESS) S1805 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIERS. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. HIGH RELIABILITY. LOW FREQUENCY MEDIUM POWER AMPLIFIERS- DRIVER STAGE AMPLIFIERS. FEATURES . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit...
Features . Excellent hFE vs. Collector Current Characteristics h FE ( 2 )=23Min. at VCE =1V, r C =400mA . Complementary to S1806. Unit in mm 5.1 MAX. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Range Storage Te...

Datasheet PDF File S1805 Datasheet 78.96KB

S1805   S1805   S1805  




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