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S2056 - Silicon NPN Transistor

Key Features

  • . High Voltage : VC ES=1500V . High Speed : tf=0.75/is (Typ. ) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 0£6±O.2 ,.

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Datasheet Details

Part number S2056
Manufacturer Toshiba
File Size 43.76 KB
Description Silicon NPN Transistor
Datasheet download datasheet S2056 Datasheet

Full PDF Text Transcription for S2056 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for S2056. For precise diagrams, and layout, please refer to the original PDF.

: SILICON NPN TRIPLE DIFFUSED MESA TYPE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES . High Voltage : VC ES=1500V . High Speed : tf=0.75/is (Typ.) . Glass Passivated Colle...

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VC ES=1500V . High Speed : tf=0.75/is (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 1&0MAX. 0£6±O.2 , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage (VBE=0V) Collector-Emitter Voltage (RBE=10QQ) Transient Collector-Emitter Voltage (Flash-over) Collector-Emitter Voltage (Open Base) Collector Current DC Peak Transient Collector Current (Flash-over) Base Current (Peak) Reverse Base Current DC Peak Collector Power Dissipation (Tc^ 90°C) Junction Temperature Storage Temperature Range SYMBOL VCES RATING 1500 UNIT VCER 1500 VCE (Flash-over) 1650 VCEO 700 ic 2.5 ICM IC (Flash-over IBM -IB -IBM 2

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