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SSM3J326T - Silicon P-Channel MOSFET

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SSM3J326T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) SSM3J326T ○ Power Management Switch Applications • 1.8-V drive • Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -10 V) +0.2 2.8-0.3 +0.2 1.6-0.1 Unit: mm 0.4±0.1 2.9±0.2 1.9±0.2 0.95 0.95 0～0.1 0.15 0.16±0.05 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -30 V VGSS ±12 V Drain current DC ID (Note 1) -5.6 A Pulse IDP (Note 1) -22.4 Power dissipation PD (Note 2) 700 mW t = 10 s 1250 Channel temperature Tch 150 °C Storage temperature range Tstg -55 to 150 °C １ ２ ３ 0.7±0.
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