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SSM3J321T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)
SSM3J321T
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.5V drive
• Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V) Ron = 62mΩ (max) (@VGS = -2.5 V) Ron = 46mΩ (max) (@VGS = -4.5 V)
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
2.9±0.2 1.9±0.2 0.95 0.95
0～0.1 0.15
0.16±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
１
２
３
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDSS
-20
V
VGSS
±8
V
ID (Note 1)
-5.2
A
IDP (Note 1)
-10.
SSM3J321T Datasheet
