SSM3J321T Overview
Key Features
- Low ON-resistance: Ron = 137mΩ (max) (@VGS = -1.5 V) Ron = 88mΩ (max) (@VGS = -1.8 V) Ron = 62mΩ (max) (@VGS = -2.5 V) Ron = 46mΩ (max) (@VGS = -4.5 V)
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SSM3J326T | Toshiba | Silicon P-Channel MOSFET |