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SSM3J325F
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J325F
○ Power Management Switch Applications
Unit: mm
• 1.5-V drive • Low ON-resistance: RDS(ON) = 311 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 231 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 179 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 150 mΩ (max) (@VGS = -4.5 V)
+0.5 2.5-0.3
+0.25 1.5-0.15
1
2
3
+0.1 0.4-0.05
2.9±0.2 1.9 0.95 0.95
Absolute Maximum Ratings (Ta = 25°C)
0.3 +0.1 0.16-0.06
+0.2 1.1-0.1
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-2.0
A
Pulse
IDP (Note 1)
-4.0
Power dissipation
PD (Note 2)
600
mW
t = 1s
1200
Channel temperature
Tch
150
°C
S-MINI
1.Gate 2.Source 3.Drain
0~0.
SSM3J325F Datasheet
