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SSM3J327R - Silicon P-Channel MOSFET

Key Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2009-12 2021-10-21 Rev.1.0 SSM3J327R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) C.

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Datasheet Details

Part number SSM3J327R
Manufacturer Toshiba
File Size 428.80 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J327R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J327R 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J327R 1: Gate 2: Source 3: Drain ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2009-12 2021-10-21 Rev.1.0 SSM3J327R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±8 V Drain current (DC) (Note 1) ID -3.