SSM3J327R
SSM3J327R is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS- )
1. Applications
- Power Management Switches
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 240 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 168 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 123 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 93 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Internal Circuit
SOT-23F
1: Gate 2: Source 3: Drain
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2009-12
2021-10-21 Rev.1.0
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