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SSM3J326T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
SSM3J326T
○ Power Management Switch Applications
• 1.8-V drive
• Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -10 V)
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
2.9±0.2 1.9±0.2 0.95 0.95
0～0.1 0.15
0.16±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-30
V
VGSS
±12
V
Drain current
DC
ID (Note 1)
-5.6
A
Pulse
IDP (Note 1)
-22.4
Power dissipation
PD (Note 2)
700
mW
t = 10 s
1250
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
１
２
３
0.7±0.
SSM3J326T Datasheet
