SSM3J326T
SSM3J326T is Silicon P-Channel MOSFET manufactured by Toshiba.
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ)
○ Power Management Switch Applications
- 1.8-V drive
- Low ON-resistance: RDS(ON) = 115 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 62.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 45.7 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 39.3 mΩ (max) (@VGS = -10 V)
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
2.9±0.2 1.9±0.2 0.95 0.95
0～0.1 0.15
0.16±0.05
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-30
VGSS
±12
Drain current
ID (Note 1)
-5.6
Pulse
IDP (Note 1)
-22.4
Power dissipation
PD (Note 2)
700 m W t = 10 s
Channel temperature
Tch
°C
Storage temperature...
