SSM3J355R Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS SSM3J355R 1. Applications • Power Management Switches 2.

Datasheet Details

(1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ. ) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ. ) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ. ) (VGS = -4.5 V) 3. Packaging and Internal Circuit SOT-23F SSM3J355R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.4.0 SSM3J355R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
) Characteristics Symbol Rating.