SSM3J355R
SSM3J355R is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS
1. Applications
- Power Management Switches
2. Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V)
3. Packaging and Internal Circuit
SOT-23F
1: Gate 2: Source 3: Drain
©2016-2025
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-11
2025-02-20 Rev.4.0
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