SSM3J338R
SSM3J338R is Silicon P-Channel MOSFET manufactured by Toshiba.
Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 26.3 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 20.1 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 15.9 mΩ (typ.) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2015-2025
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-08
2025-02-20 Rev.3.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage
VDSS
-12
VGSS
±10
Drain current (DC)
(Note 1)
-6
Drain current (pulsed)
(Note 1), (Note 2)
-14
Power dissipation Power dissipation Channel temperature Storage temperature t ≤ 10s
(Note 3)
(Note...
