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SSM3J332R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J332R
○Power Management Switch Applications
• 1.8-V drive • Low ON-resistance: RDS(ON) = 144 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 72.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 50.0 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 42.0 mΩ (max) (@VGS = -10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGSS
± 12
V
Drain current
DC
ID (Note 1)
-6.0
A
Pulse
IDP (Note 1,2)
-24.0
Power dissipation
PD (Note 3)
1
W
t < 10s
2
Channel temperature Storage temperature range
Tch
150
°C
Tstg
-55 to 150
°C
SOT-23F
1: Gate 2: Source 3: Drain
Note: Using continuously under heavy loads (e.g.
SSM3J332R Datasheet
