SSM3J334R Overview
Key Features
- Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
- source ON-resistance
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| SSM3J338R | Toshiba | Silicon P-Channel MOSFET |