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SSM3J334R
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSVI)
SSM3J334R
○Power Management Switch Applications
Unit: mm
• Low ON-resistance: RDS(ON) = 71 mΩ (max) (@VGS = -10 V) RDS(ON) = 105 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-Source voltage
VDSS
-30
V
Gate-Source voltage
VGSS
± 20
V
Drain current
DC
ID (Note 1)
-4
A
Pulse
IDP (Note 1,2)
-16
Power dissipation
PD (Note 3)
1
W
t < 10s
2
Channel temperature Storage temperature range
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J334R Datasheet
