SSM3J331R
SSM3J331R is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Power Management Switches
2. Features
(1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 150 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 100 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 75 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 55 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Configuration
SOT-23F
1. Gate 2. Source 3. Drain
©2016 Toshiba Corporation
Start of mercial production
2011-07
2016-08-24 Rev.5.0
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