SSM3J65CTC mosfet equivalent, silicon p-channel mosfet.
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 1110 mΩ (typ.) (@VGS = -1.2 V) RDS(ON) = 780 mΩ (typ.) (@VGS = -1.5 V) RDS(ON) = 650 mΩ (typ.) (@VGS = -1.8.
* Power Management Switches
2. Features
(1) 1.2 V drive (2) Low drain-source on-resistance
: RDS(ON) = 1110 mΩ (typ..
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