SSM3J66MFV - Silicon P-Channel MOSFET

Product Overview

Toshiba

Part number	SSM3J66MFV
Manufacturer	Toshiba
File Size	282.77 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM3J66MFV Datasheet
Additional preview pages of the SSM3J66MFV datasheet.

(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.2-V drive (3) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V) 3. Packaging and Pin Configuration SSM3J66MFV 1. Gate 2. Source 3. Drain VESM 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J66MFV,L3F SSM3J66MFV,L3XGF SSM3J.

📁 Similar Datasheet

SSM3J01F - Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM3J01T - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Toshiba Semiconductor)
SSM3J02F - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Toshiba Semiconductor)
SSM3J02T - TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Toshiba Semiconductor)
SSM3J05FU - Power Management Switch High Speed Switching Applications (Toshiba Semiconductor)
SSM3J09FU - Silicon P-Channel MOSFET (Toshiba Semiconductor)
SSM3J108TU - Field Effect Transistor Silicon P-Channel MOS Type (Toshiba Semiconductor)
SSM3J109TU - Silicon P-Channel MOSFET (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Jun 22, 2019 |