SSM3K2615TU - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	SSM3K2615TU
Manufacturer	Toshiba
File Size	454.92 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K2615TU Datasheet
Additional preview pages of the SSM3K2615TU datasheet.

(1) AEC-Q101 Qualified (Note1). (2) 3.3-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 380 mΩ (typ. ) (@VGS = 3.3 V, ID = 0.5 A) RDS(ON) = 330 mΩ (typ. ) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 230 mΩ (typ. ) (@VGS = 10 V, ID = 1.0 A) Note1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment UFM SSM3K2615TU 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-06 2016-12-05 Rev.2.0 SSM3K2615TU 4. Absolut.

📁 Similar Datasheet

SSM3K01F - Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K01T - Silicon N-Channel MOSFET (Toshiba Semiconductor)
SSM3K02F - TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Toshiba Semiconductor)
SSM3K02T - High Speed Switching Applications (Toshiba Semiconductor)
SSM3K03FE - Silicon N-Channel MOS Type FET (Toshiba Semiconductor)
SSM3K03FV - High Speed Switching Applications (Toshiba Semiconductor)
SSM3K03TE - High Speed Switching Applications (Toshiba Semiconductor)
SSM3K04FE - High Speed Switching Applications (Toshiba Semiconductor)

Other Datasheets by Toshiba

Published: Dec 14, 2023 |