Datasheet Summary
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (U-MOSⅣ)
High-Speed Switching Applications
- 4.5 V drive
- Low ON-resistance : Ron = 77 mΩ (max) (@VGS = 4.5 V)
: Ron = 50 mΩ (max) (@VGS = 10 V)
Unit: mm
+0.2 2.8-0.3
+0.2 1.6-0.1
0.4±0.1
0～0.1...