The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
MOSFETs Silicon N-Channel MOS
SSM3K337R
1. Applications
• Relay Drivers
2. Features
(1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A)
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
SOT-23F
SSM3K337R
1: Gate 2: Source 3: Drain
©2016-2021
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2013-12
2021-01-05 Rev.6.0
SSM3K337R
4.