Datasheet4U Logo Datasheet4U.com

SSM3K337R - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F SSM3K337R 1: Gate 2: Source 3: Drain ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-12 2021-01-.

📥 Download Datasheet

Datasheet Details

Part number SSM3K337R
Manufacturer Toshiba
File Size 259.92 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K337R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
MOSFETs Silicon N-Channel MOS SSM3K337R 1. Applications • Relay Drivers 2. Features (1) AEC-Q101 Qualified (Note1). (2) 4.0-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 200 mΩ (max) (@VGS = 4.0 V, ID = 1.0 A) RDS(ON) = 176 mΩ (max) (@VGS = 4.5 V, ID = 2.0 A) RDS(ON) = 150 mΩ (max) (@VGS = 10 V, ID = 2.0 A) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F SSM3K337R 1: Gate 2: Source 3: Drain ©2016-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2013-12 2021-01-05 Rev.6.0 SSM3K337R 4.