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SSM3K335R - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Configuration SSM3K335R 1.Gate 2.Source 3.Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K335R,LF SSM3K335R,LXGF.
  • YES (Note 1) General Use Unintended Use Note 1: For more information, please contact our sales or use the inq.

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Datasheet Details

Part number SSM3K335R
Manufacturer Toshiba
File Size 246.45 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K335R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K335R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 38 mΩ (max) (@VGS = 10 V) RDS(ON) = 56 mΩ (max) (@VGS = 4.5 V) 3. Packaging and Pin Configuration SSM3K335R 1.Gate 2.Source 3.Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3K335R,LF SSM3K335R,LXGF � YES (Note 1) General Use Unintended Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-02 2021-07-29 Rev.6.0 SSM3K335R 5.