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SSM3K333R - Silicon N-Channel MOSFET

Key Features

  • (1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2025-02-20 Rev.3.0 SSM3K333R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage.

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Datasheet Details

Part number SSM3K333R
Manufacturer Toshiba
File Size 391.67 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K333R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS�-H) SSM3K333R 1. Applications • Power Management Switches • High-Speed Switching 2. Features (1) 4.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 42 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 28 mΩ (max) (@VGS = 10 V) 3. Packaging and Pin Assignment SOT-23F SSM3K333R 1: Gate 2: Source 3: Drain ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-10 2025-02-20 Rev.3.0 SSM3K333R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS 30 V VGSS ±20 Drain current (DC) (Note 1) ID 6.0 A Drain current (pulsed) (Note 1), (Note 2) IDP 12.