SSM3K339R
SSM3K339R is Silicon N-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2025
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2014-02
2025-01-23 Rev.2.0
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