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SSM3K339R - Silicon N-Channel MOSFET

Key Features

  • (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ. ) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ. ) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ. ) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ. ) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 220 mΩ (typ. ) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment SOT-23F SSM3K339R 1: Gate 2: Source 3: Drain ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-02.

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Datasheet Details

Part number SSM3K339R
Manufacturer Toshiba
File Size 316.56 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K339R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM3K339R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.8-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 145 mΩ (typ.) (@VGS = 8.0 V, ID = 1.0 A) RDS(ON) = 155 mΩ (typ.) (@VGS = 4.5 V, ID = 1.0 A) RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V, ID = 1.0 A) RDS(ON) = 180 mΩ (typ.) (@VGS = 2.5 V, ID = 0.5 A) RDS(ON) = 220 mΩ (typ.) (@VGS = 1.8 V, ID = 0.2 A) 3. Packaging and Pin Assignment SOT-23F SSM3K339R 1: Gate 2: Source 3: Drain ©2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2014-02 2025-01-23 Rev.2.0 SSM3K339R 4.