Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- Power Management Switches
- DC-DC Converters
2. Features
(1) 1.5 V drive (2) Low drain-source on-resistance
: RDS(ON) = 51 mΩ (Typ.) (@VGS = 4.5 V) RDS(ON) = 63 mΩ (Typ.) (@VGS = 2.5 V) RDS(ON) = 81 mΩ (Typ.) (@VGS = 1.8 V) RDS(ON) = 102 mΩ (Typ.) (@VGS = 1.5 V)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-11
2016-12-06 Rev.1.0
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