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SSM3K345R - Silicon N-Channel MOSFET

Key Features

  • (1) 1.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3K345R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.3.0 SSM3K345R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Char.

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Datasheet Details

Part number SSM3K345R
Manufacturer Toshiba
File Size 430.08 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K345R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM3K345R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 33 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = 2.5 V) RDS(ON) = 74 mΩ (max) (@VGS = 1.8 V) RDS(ON) = 108 mΩ (max) (@VGS = 1.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3K345R 1: Gate 2: Source 3: Drain ©2016-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-11 2025-02-20 Rev.3.0 SSM3K345R 4.