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SSM3K344R - Silicon N-Channel MOSFET

Key Features

  • (1) 1.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 51 mΩ (Typ. ) (@VGS = 4.5 V) RDS(ON) = 63 mΩ (Typ. ) (@VGS = 2.5 V) RDS(ON) = 81 mΩ (Typ. ) (@VGS = 1.8 V) RDS(ON) = 102 mΩ (Typ. ) (@VGS = 1.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3K344R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-11 2016-12-06 Rev.1.0 SSM3K344R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit.

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Datasheet Details

Part number SSM3K344R
Manufacturer Toshiba
File Size 370.41 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K344R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM3K344R 1. Applications • Power Management Switches • DC-DC Converters 2. Features (1) 1.5 V drive (2) Low drain-source on-resistance : RDS(ON) = 51 mΩ (Typ.) (@VGS = 4.5 V) RDS(ON) = 63 mΩ (Typ.) (@VGS = 2.5 V) RDS(ON) = 81 mΩ (Typ.) (@VGS = 1.8 V) RDS(ON) = 102 mΩ (Typ.) (@VGS = 1.5 V) 3. Packaging and Pin Assignment SOT-23F SSM3K344R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-11 2016-12-06 Rev.1.0 SSM3K344R 4.