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SSM3K347R - Silicon N-Channel MOSFET

Key Features

  • (1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0 V drive (3) Built-in pull down resistance 47 kΩ. (4) Low drain-source on-resistance : RDS(ON) = 480 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 410 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 340 mΩ (max) (@VGS = 10 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F SSM3K347R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-04 2016-09-30 Rev.2.0 SSM3K347R 4. Absolute.

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Datasheet Details

Part number SSM3K347R
Manufacturer Toshiba
File Size 276.53 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM3K347R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-channel MOS (U-MOS) SSM3K347R 1. Applications • Relay Drivers 2. Features (1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0 V drive (3) Built-in pull down resistance 47 kΩ. (4) Low drain-source on-resistance : RDS(ON) = 480 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 410 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 340 mΩ (max) (@VGS = 10 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Assignment SOT-23F SSM3K347R 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-04 2016-09-30 Rev.2.0 SSM3K347R 4.