Datasheet Summary
MOSFETs Silicon N-channel MOS (U-MOS)
1. Applications
- Relay Drivers
2. Features
(1) AEC-Q101 (Rev. D) qualified. (Note 1) (2) 4.0 V drive (3) Built-in pull down resistance 47 kΩ. (4) Low drain-source on-resistance
: RDS(ON) = 480 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 410 mΩ (max) (@VGS = 4.5 V) RDS(ON) = 340 mΩ (max) (@VGS = 10 V)
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-04
2016-09-30 Rev.2.0
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