Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) ESD protected gate (2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V)
3. Packaging and Internal Circuit
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-02
2016-11-17 Rev.3.0
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