SSM3K72KCT Datasheet | Toshiba

Features (1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Pin Assignment CST3 ©2016-2020 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2016-01 2020-11-24 Rev.3.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 - ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS VGSS ±20 Drain current (DC) (Note 1) 400 m A Drain current (pulsed) (Note 1), (Note 2) Power dissipation Channel temperature (Note 3) Tch 500 m W - Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 - . Note 2: pulse width ≤ 10 µs, Duty ≤ 1 % Note 3: Device mounted on a 25.4 mm × 25.4 mm × 1.6 mm FR4 glass epoxy board (Cu pad: 645...