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SSM3K72KCT Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

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Overview

MOSFETs Silicon N-Channel MOS SSM3K72KCT 1.

Applications • High-Speed Switching 2.

Key Features

  • (1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ. ) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ. ) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ. ) (@VGS = 4.5 V) 3. Packaging and Pin Assignment CST3 SSM3K72KCT ©2016-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2016-01 2020-11-24 Rev.3.0 SSM3K72KCT 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage V.

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