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SSM3K72CTC - Silicon N-Channel MOSFET

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Features

  • (1) ESD protected gate (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ. ) (@VGS = 10 V) RDS(ON) = 3.1 Ω (typ. ) (@VGS = 5.0 V) RDS(ON) = 3.2 Ω (typ. ) (@VGS = 4.5 V) 3. Packaging and Pin Assignment SSM3K72CTC CST3C ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-01 2017-12-04 Rev.3.0 SSM3K72CTC 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDS.

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Datasheet Details

Part number SSM3K72CTC
Manufacturer Toshiba
File Size 226.94 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS SSM3K72CTC 1. Applications • High-Speed Switching 2. Features (1) ESD protected gate (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Pin Assignment SSM3K72CTC CST3C ©2015-2017 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-01 2017-12-04 Rev.3.0 SSM3K72CTC 4.
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