SSM3K72CTC Datasheet | Toshiba

Features (1) ESD protected gate (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Pin Assignment CST3C ©2015-2017 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2015-01 2017-12-04 Rev.3.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) 150 m A Drain current (pulsed) (Note 1), (Note 2) Power dissipation (Note 3) 500 m W Channel temperature Tch  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate,...