Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) ESD protected gate (2) Low drain-source on-resistance
: RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V)
3. Packaging and Pin Assignment
CST3C
©2015-2017 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2015-01
2017-12-04 Rev.3.0
4....