Datasheet Summary
MOSFETs Silicon N-Channel MOS
1. Applications
- High-Speed Switching
2. Features
(1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V)
3. Packaging and Pin Assignment
CST3
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2016-01
2020-11-24 Rev.3.0
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