SSM6P56FE mosfet equivalent, p-channel mosfet.
(1) 1.2-V drive (2) Low drain-source on-resistance
: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 6.
* Power Management Switches
2. Features
(1) 1.2-V drive (2) Low drain-source on-resistance
: RDS(ON) = 390 mΩ (max) .
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