Datasheet Summary
MOSFETs Silicon P-Channel MOS
1. Applications
- Power Management Switches
2. Features
(1) 1.2-V drive (2) Low drain-source on-resistance
: RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 mA) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V, ID = -10 mA)
3. Packaging and Pin Assignment
ES6
1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1
©2017-2019 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-05
2019-08-01 Rev.1.0
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