SSM6P69NU
SSM6P69NU is P-Channel MOSFET manufactured by Toshiba.
Features
(1) AEC-Q101 qualified (Note 1) (2) 1.8 V drive (3) Low drain-source on-resistance
: RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
UDFN6
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2017-2018 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-02
2018-03-27 Rev.1.0
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )(Q1, Q2 mon)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-20
Gate-source voltage
VGSS
-12/+6
Drain current (DC)
(Note 1)
-4
Drain current (pulsed)
(Note 1), (Note 2)
-16
Power dissipation
(Note 3)
Power dissipation
(t ≤ 10 s)
(Note...
