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SSM6P56FE - P-Channel MOSFET

Features

  • (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 mA) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V, ID = -10 mA) 3. Packaging and Pin Assignment ES6 SSM6P56FE 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of c.

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MOSFETs Silicon P-Channel MOS SSM6P56FE 1. Applications • Power Management Switches 2. Features (1) 1.2-V drive (2) Low drain-source on-resistance : RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V, ID = -800 mA) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V, ID = -500 mA) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V, ID = -200 mA) RDS(ON) = 900 mΩ (max) (@VGS = -1.5 V, ID = -100 mA) RDS(ON) = 4000 mΩ (max) (@VGS = -1.2 V, ID = -10 mA) 3. Packaging and Pin Assignment ES6 SSM6P56FE 1. Source1 2. Gate1 3. Drain2 4. Source2 5. Gate2 6. Drain1 ©2017-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-05 2019-08-01 Rev.1.0 SSM6P56FE 4.
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