SSM6P816R Datasheet | Toshiba

Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V) 3. Packaging and Internal Circuit TSOP6F 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2020 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2019-07 2020-07-27 Rev.1.0 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation (t ≤ 100 ms) (Note 1) (Note 1), (Note 2) (Note 3) (Note 3) VDSS VGSS ID IDP PD -20 ±10 -6 -24 Channel temperature Storage temperature Tch  Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) ≤ 1 ms, duty ≤ 1 % Note 3: Device mounted on an FR4 board. (PD for the entire IC) (FR4, 25.4 mm × 25.4 mm × 1.6 mm, Cu pad: 645 mm2) Note:...