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SSM6P816R - P-Channel MOSFET

Features

  • (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ. ) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ. ) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ. ) (VGS = -4.5 V) 3. Packaging and Internal Circuit TSOP6F SSM6P816R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-07 2020-07-27 Rev.1.0 SSM6P816R 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Cha.

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MOSFETs Silicon P-Channel MOS SSM6P816R 1. Applications • Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V) 3. Packaging and Internal Circuit TSOP6F SSM6P816R 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2019-07 2020-07-27 Rev.1.0 SSM6P816R 4.
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