SSM6H19NU - DC-DC Converters

Toshiba

Datasheet Details

Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU 1.

Applications • DC-DC Converters 2.

(1) N-channel MOSFET and a schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ. ) (@VGS = 3.6 V) (2) 1.8-V gate drive voltage. 2.2. Diode Features (1) Low forward voltage: VF = 0.51 V (typ. ) (@IF = 500 mA) 3. Packaging and Internal Circuit SSM6H19NU 1.Anode 2.N. C. 3.Drain 4.Source 5.Gate 6.Cathode UDFN6 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25.
) C.