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SSM6H19NU - DC-DC Converters

Features

  • (1) N-channel MOSFET and a schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ. ) (@VGS = 3.6 V) (2) 1.8-V gate drive voltage. 2.2. Diode Features (1) Low forward voltage: VF = 0.51 V (typ. ) (@IF = 500 mA) 3. Packaging and Internal Circuit SSM6H19NU 1.Anode 2.N. C. 3.Drain 4.Source 5.Gate 6.Cathode UDFN6 4. Absolute Maximum Ratings (Note) 4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25.
  • ) C.

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Datasheet Details

Part number SSM6H19NU
Manufacturer Toshiba
File Size 297.51 KB
Description DC-DC Converters
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Full PDF Text Transcription

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Composite Devices Silicon N-Channel MOS/Epitaxial Schottky Barrier SSM6H19NU 1. Applications • DC-DC Converters 2. Features (1) N-channel MOSFET and a schottky barrier diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V) (2) 1.8-V gate drive voltage. 2.2. Diode Features (1) Low forward voltage: VF = 0.51 V (typ.) (@IF = 500 mA) 3. Packaging and Internal Circuit SSM6H19NU 1.Anode 2.N.C. 3.Drain 4.Source 5.Gate 6.Cathode UDFN6 4. Absolute Maximum Ratings (Note) 4.1.
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