SSM6H19NU
SSM6H19NU is DC-DC Converters manufactured by Toshiba.
Features
(1) N-channel MOSFET and a schottky barrier diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 160 mΩ (typ.) (@VGS = 3.6 V)
(2) 1.8-V gate drive voltage.
2.2. Diode Features
(1) Low forward voltage: VF = 0.51 V (typ.) (@IF = 500 m A)
3. Packaging and Internal Circuit
1.Anode 2.N.C. 3.Drain 4.Source 5.Gate 6.Cathode
UDFN6
4. Absolute Maximum Ratings (Note)
4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25
- )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain current (pulsed)
(Note 1)
Channel temperature
Note 1: Ensure that the channel temperature does not exceed 150
- .
VDSS VGSS
ID IDP Tch
±12
- ©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2013-12
2021-09-17 Rev.3.0
4.2. Absolute Maximum Ratings of the Diode (Unless otherwise specified, Ta = 25
- )
Characteristics...
