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SSM6J422TU - Silicon P-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SSM6J422TU 1, 2, 5, 6: Drain 3: Gate 4: Source UF6 4. Orderable part number Orderable part number AEC-Q101 Note SSM6J422TU,LF SSM6J422TU,LXGF SSM6J422TU,LXHF.

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Datasheet Details

Part number SSM6J422TU
Manufacturer Toshiba
File Size 286.11 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J422TU Datasheet

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J422TU 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 99.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 67.8 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 51.4 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 42.7 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Configuration SSM6J422TU 1, 2, 5, 6: Drain 3: Gate 4: Source UF6 4. Orderable part number Orderable part number AEC-Q101 Note SSM6J422TU,LF SSM6J422TU,LXGF SSM6J422TU,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website.