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SSM6J424TU - Silicon P-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Note 1) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Configuration UF6 SSM6J424TU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 2018-03-27 Rev.1.0 SSM6J424TU 4.

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Datasheet Details

Part number SSM6J424TU
Manufacturer Toshiba
File Size 246.12 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J424TU Datasheet

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MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J424TU 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Note 1) (2) 1.5-V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 54 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 36 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 26 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 22.5 mΩ (max) (@VGS = -4.5 V) Note 1: For detail information, please contact to our sales. 3. Packaging and Pin Configuration UF6 SSM6J424TU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 2018-03-27 Rev.1.0 SSM6J424TU 4.