Datasheet Summary
MOSFETs Silicon P-Channel MOS
1. Applications
- Power Management Switches
2. Features
(1) AEC-Q101 qualified (Note 1) (2) 1.8 V drive (3) Low drain-source on-resistance
: RDS(ON) = 157 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 76 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 56 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 45 mΩ (max) (@VGS = -10 V)
Note 1: For detail information, please contact to our sales.
3. Packaging and Pin Assignment
UDFN6
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2017-2018 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2018-02
2018-03-27 Rev.1.0
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