SSM6P816R Datasheet, Toshiba

(1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 .

* Power Management Switches 2. Features (1) 1.8 V drive (2) Low drain-source on-resistance : RDS(ON) = 36.0 mΩ (typ..