Datasheet Summary
MOSFETs Silicon P-Channel MOS
1. Applications
- Power Management Switches
2. Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 36.0 mΩ (typ.) (VGS = -1.8 V) RDS(ON) = 28.0 mΩ (typ.) (VGS = -2.5 V) RDS(ON) = 23.0 mΩ (typ.) (VGS = -4.5 V)
3. Packaging and Internal Circuit
TSOP6F
1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1
©2020 Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2019-07
2020-07-27 Rev.1.0
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