| Description | : SILICON PNP EPITAXIAL TYPE (PCT PROCESS) TBC327 TBC328 PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. NPN COMPLEMENTS ARE TBC337 AND TBC338. Unit in mm FEATURES . High V C EO : -45V (TBC327) -25V (TBC328) . Low Saturation Voltage : VC E(sat)=-0.7V (Max.) at Ic=-500mA MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC327 v ... |
| Features |
. High V C EO : -45V (TBC327)
-25V (TBC328) . Low Saturation Voltage
: VC E(sat)=-0.7V
(Max.)
at Ic=-500mA
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC327 v (BR)CBO
TBC328
Collector-Emitter Breakdown Voltage
TBC327 v (BR) CEO
TBC328
Emitter-Base Breakdown Voltage
v (BR)EBO
Collector Current
DC
i...
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| Datasheet |
 TBC328 Datasheet 35.51KB |
