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TBC337 Datasheet - Toshiba

Silicon NPN Transistor

TBC337 Features

* . High V C EO : 45V (TBC337) 25V (TBC338) . Low Saturation Voltage : V CE ( sat )=0.7V (Max.) at I C =500mA Unit in mm ' r^ < „H 4n o.4 5 z 55 MAX. a | J 00 00 r- C.4 5 r-i MAXIMUM RATINGS (Ta= 25 °C) CHARACTERISTIC Collector-Base Breakdown Voltage TBC337 TBC338 Collector-Emitter Br

TBC337 Datasheet (34.96 KB)

Preview of TBC337 PDF

Datasheet Details

Part number:

TBC337

Manufacturer:

Toshiba ↗

File Size:

34.96 KB

Description:

Silicon npn transistor.
: TBC337 TBC338 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER AND OUTPUT STAGE OF AUDIO AMPLIFIERS. PNP COMPLEMENTS.

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TBC337 Silicon NPN Transistor Toshiba

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