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TBC547 - Silicon NPN Transistor

Download the TBC547 datasheet PDF. This datasheet also covers the TBC546 variant, as both devices belong to the same silicon npn transistor family and are provided as variant models within a single manufacturer datasheet.

Features

  • . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TBC546-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TBC547
Manufacturer Toshiba
File Size 52.49 KB
Description Silicon NPN Transistor
Datasheet download datasheet TBC547 Datasheet

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Other Datasheets by Toshiba

Part Number Description
TBC546 Silicon NPN Transistor
TBC548 Silicon NPN Transistor
TBC549 Silicon NPN Transistor
TBC550 Silicon NPN Transistor
TBC556 Silicon PNP Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS. FEATURES . High VqeO High hpE Low Noise 65V (TBC546) 45V (TBC547) 30V (TBC548) 110-800 TBC546 TBC547 TBC548 Unit in mm 5.1 MAX. r -i . MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC546 TBC547 v (BR)CBO TBC548 Collector-Emitter Breakdown Voltage TBC546 TBC547 V (BR) CEO TBC548 Emitter-Base Breakdown Voltage TBC546 TBC547 V (BR)EBO TBC548 DC ic Collector Current Peak ICP Base Current (Peak) IBP Collector Power Dissipation ?C Junction Temperature Ti Storage Temperature Range L stg RATING 80 50 30 65 45 30 UNIT 100 mA 200 200 mA 500 mW 150 -65-150 1. COLLECTOR 2. BASE 3. EMITTER Weight : 0.
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