TBC556
TBC556 is Silicon PNP Transistor manufactured by Toshiba.
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
TBC556 TBC557 TBC558
PRIMARILY INTENDED FOR USE DRIVER STAGE OF AUDIO AMPLIFIERS.
Unit in mm
Features
. High VcEO
. Low Noise
-65V (TBC556) -45V (TBC557) -30V (TBC558)
H^fj/ X 3
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Breakdown Voltage
TBC556 TBC557 TBC558
Collector-Emitter Breakdown Voltage
TBC556 TBC557 TBC558
Emitter-Base Breakdown Voltage
SYMBOL v (BR)CBO v (BR)CE0 V (BR)EB0
RATING -80
-50
-30 -65
-45
-30
UNIT
1. COLLECTOR 2. BASE 3. EMITTER
TOSHIBA
2-5P1Q
Weight : 0.21g
Collector Current Base Current (Peak)
DC Peak
Collector Power Dissipation
Junction...
