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TC511001Z-85 Datasheet Dram

Manufacturer: Toshiba

Overview: TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12 The TC5ll00lP/J/Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit.

The TC5ll00lP/J/Z utilizes TOSHIBA's caos Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Multiplexed address inputs permit the TC5ll00lP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.

Key Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The special feature of TC5Il00IP/J/Z is nibble mode, allowing the user to serially access 4 bits of data at a high data r.

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